High performance 12 GHz enhancement-mode pseudomorphic HEMT prepared by He plus reactive ion etching

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 695-698

  Lin, C S ^a   Fang, Y K ^a   Ting, S F ^a   Wang, C C ^b   Huang, H K ^b   Wu, C L ^b   Chang, C S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Transcom Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HELIUM; ION BOMBARDMENT; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

ENERGETIC ION BOMBARDMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037394295     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00317-9     Document Type: Article

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