Very high selective etching of GaAs/Al0.2Ga0.8as for gate recess process to pseudomorphic high electron mobility transistors (PHEMT) applications using citric buffer solution

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 B, 2004, Pages

  Liao, Chin I ^a   Sze, Po Wen ^b   Houng, Mau Phon ^a   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Citric acid; Etching; H2o2; PHEMT; Selectivity; Uniformity

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; HYDROGEN PEROXIDE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; THRESHOLD ELEMENTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CITRIC ACID; GATE RECESS PROCESSES; HIGH SELECTIVE ETCHING; PSEODOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4243129290     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l800     Document Type: Article

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