Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2675-2679

  Hue, X ^a   Boudart, B ^a   Crosnier, Y ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013164413     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590255     Document Type: Article

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