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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 B, 2005, Pages 5696-5699

Characteristics of thermally treated quantum-dot infrared photodetector

(7) Hwang, Sung Ho a,b Shin, Jae Cheol a Song, Jin Dong a Choi, Won Jun a Lee, Jung I I a Han, Haewook b Lee, Seung Woong c

a Korea Institute of Science and Technology (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

c Dongguk University (South Korea)

Author keywords

Quantum dot infrared photodetector; Thermal treatment

Indexed keywords

ACTIVATION ENERGY; HEAT TREATMENT; INFRARED DEVICES; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM DOTS;

CAPPING LAYERS; DARK CURRENTS; QUANTUM-DOT INFRARED PHOTODETECTORS;

PHOTODETECTORS;

EID: 31844449135 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.5696 Document Type: Article

Times cited : (4)

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