Role of insertion layer controlling wavelength in InGaAs quantum dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4378-4381

  Park, Se Ki ^a   Park, Young Ju ^a,e   Kim, Eun Kyu ^a   Park, Chan Jin ^b   Cho, Hoon Young ^c   Lim, Young Soo ^d   Lee, Jeong Yong ^b   Lee, Cheon ^c  

^a Korea Institute of Science and Technology   (South Korea)

^b Dongguk University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Inha University   (South Korea)

^e Hanyang University   (South Korea)

Author keywords

AIGaAs insertion layer (IL); InGaAs GaAs quantum dots; Local strain; Metal organic chemical vapor deposition; Red shift

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; INSERTION LAYERS (IL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036614044     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4378     Document Type: Article

References (16)