Improved etched surface morphology in electron cyclotron resonance-reactive ion etching of GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 B, 2005, Pages 5819-5823

  Arakawa, Taro ^a   Awa, Yoshiki ^a   Ide, Tomoyoshi ^a   Haneji, Nobuo ^a   Tada, Kunio ^b   Sugiyama, Masakazu ^c   Shimzu, Hiromasa ^d   Shimogaki, Yukihiro ^c   Nakano, Yoshiaki ^d  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

CH4; Cyclic etching; ECR RIE; GaN

Indexed keywords

GALLIUM NITRIDE; MORPHOLOGY; OXIDATION; REACTIVE ION ETCHING;

CH4; CYCLIC ETCHING; ECR-RIE; GAN;

ELECTRON CYCLOTRON RESONANCE;

EID: 31844446420     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5819     Document Type: Article

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