Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow

Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

Volumn , Issue , 2003, Pages 330-331

  Haneji, N ^a   Ide, T ^a   Awa, Y ^a   Arakawa, T ^a   Tada, K ^b   Sugiyama, M ^c   Shimogaki, Y ^c   Nakano, Y ^c  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON LASERS; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; LIGHT MODULATORS; MULTILAYERS; NANOTECHNOLOGY; OPTICAL MULTILAYERS; SEMICONDUCTING INDIUM;

AR FLOWS; CYCLIC ETCHING; ETCHING CHARACTERISTICS; MULTILAYER STRUCTURES;

REACTIVE ION ETCHING;

EID: 84949192599     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.2003.1268780     Document Type: Conference Paper

References (3)

1. T. Suzuki et al, Jpn. J. Appl. Phys., 41, l, l5 (2002).
2. N. Haneji et al, Jpn. J. Appl. Phys., 42, 6B, 3598 (2003).
3. T. Suzuki et al., Jpn. J. Appl. Phys., 41, 4B, 2702 (2002).