Reactive ion beam etching of GaN and AlGaN/GaN for nanostructure fabrication using methane-based gas mixtures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2689-2693

  Endo, Makoto ^a   Jin, Zhi ^a   Kasai, Seiya ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Aluminum gallium nitride (aigan); Gallium nitride (gan); Methane based gas mixture; Nanostructure; Reactive ion beam etching (rise)

Indexed keywords

ALUMINUM COMPOUNDS; FABRICATION; METHANE; NANOSTRUCTURED MATERIALS; REACTIVE ION ETCHING;

ALUMINUM GALLIUM NITRIDE (AIGAN); METHANE-BASED GAS MIXTURE; NANOSTRUCTURE; REACTIVE ION BEAM ETCHING (RISE);

GALLIUM NITRIDE;

EID: 0038152175     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2689     Document Type: Article

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