Study of defects and strain relaxation in GaAs/InxGa1-xAs/GaAs heterostructures using photoluminescence, positron annihilation, and x-ray diffraction

Journal of Applied Physics

Volumn 87, Issue 12, 2000, Pages 8444-8450

  Arora, B M ^a   Chandrasekaran, K S ^a   Gokhale, M R ^a   Nair, Geeta ^a   Venugopal Rao, G ^b   Amarendra, G ^b   Viswanathan, B ^b  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008875611     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373561     Document Type: Article

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