Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 241-244

  Lancefield, D ^a   Crawford, A ^a   Beaumont, B ^b   Gibart, P ^b   Heuken, M ^c   Di Forte Poisson, M ^d  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CRHEA CNRS   (France)

^c AIXTRON AG   (Germany)

^d THALES   (France)

Author keywords

Electroluminescence; GaN; InGaN; LEDs; Transport

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

CARRIER TRANSPORT;

LIGHT EMITTING DIODES;

EID: 0035933179     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00670-X     Document Type: Article

References (4)