Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

Journal of Crystal Growth

Volumn 288, Issue 1, 2006, Pages 123-127

  Montaigne Ramil, A ^a   Singh, Th B ^a   Haber, N T ^b   Marjanovic N ^a   Gunes S ^a   Andreev, A ^c   Matt, G J ^a   Resel, R ^b   Sitter, H ^a   Sariciftci, S ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c UNIVERSITY OF LEOBEN   (Austria)

Author keywords

A1. Morphology; A3. C60 thin film; A3. Hot wall epitaxy; B2. Organic field effect transistors

Indexed keywords

CARRIER MOBILITY; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; FULLERENES; MORPHOLOGY; THIN FILMS;

C60 THIN FILMS; HOT WALL EPITAXY; ORGANIC FIELD-EFFECT TRANSISTORS;

FILM GROWTH;

EID: 31644443873     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.061     Document Type: Conference Paper

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