Void formation in the Cu layer during thermal treatment of SiN x/Cu/Ta73Si27/SiO2/Si systems

Crystal Research and Technology

Volumn 40, Issue 1-2, 2005, Pages 135-142

  Hubner R ^a   Reiche, R ^a   Hecker, M ^a   Mattern, N ^a   Hoffmann, V ^a   Wetzig, K ^a   Heuer, H ^b   Wenzel, Ch ^b   Engelmann, H J ^c   Zschech, E ^c  

^a IFW DRESDEN   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Cu metallization; Diffusion barrier; SiNx passivation; Void formation

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; AUGER ELECTRON SPECTROSCOPY; COPPER; CRYSTALLIZATION; DIFFUSION; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); METALLIZING; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CU METALLIZATION; DIFFUSION BARRIERS; SINX PASSIVATION; VOID FORMATION;

SILICON NITRIDE;

EID: 25444518186     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410316     Document Type: Article

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