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Volumn 200, Issue 10 SPEC. ISS., 2006, Pages 3224-3229

A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition

(6) Feng, Zhe Chuan a Li, Kun b Hou, Yun Tian c,f Zhao, Jie d Lu, W e Collins, W E e

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

c INSTITUTE OF MICROELECTRONICS (Singapore)

d TIANJIN NORMAL UNIVERSITY (China)

e FISK UNIVERSITY (United States)

f TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

Author keywords

AFM; FTIR; GaN; Reflectance; Sapphire; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE THIN FILMS; INFRARED REFLECTANCE;

GALLIUM NITRIDE;

ATOMIC FORCE MICROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 31644433898 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2005.07.018 Document Type: Article

Times cited : (4)

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