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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 36-39

Metal contacts on InN: Proposal for Schottky contact

(4) Rangel Kuoppa, Victor Tapio a Suihkonen, Sami a Sopanen, Markku a Lipsanen, Harri a

a AALTO UNIVERSITY (Finland)

Author keywords

Annealing; InN; Metal contact; Ohmic behavior; Rectifying behavior; Schottky contact

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY;

METAL CONTACT; OHMIC BEHAVIOR; RECTIFYING BEHAVIOR; SCHOTTKY CONTACT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31544437177 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.36 Document Type: Article

Times cited : (19)

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