Growth of InN for heterojunction field effect transistor applications by plasma enhanced MBE

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 225-231

  Schaff, William J ^a   Lu, Hai ^a   Hwang, Jeonghyun ^a   Wu, Hong ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS;

HETEROJUNCTION FIELD EFFECT TRANSISTOR; INDIUM NITRIDE; MIGRATION ENHANCED EPITAXY; PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034594112     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. "Transient electron transport in wurtzite GaN, InN, and AlN" Brian E. Foutz, Stephen, K. O'Leary, Michael S. Shur and Lester F. Eastman, Journal of Applied Physics 85, 11 1 June 1999
2. "Materials theory based modeling of wide band gap semiconductors: from basic properties to devices", Brennan, K.F.; Bellotti, E.; Farahmand, M.; Haralson, J., II; Ruden, P.P.; Albrecht, J.D.; Sutandi, A., Solid-State Electron. (UK), Solid-State Electronics, vol.44, no.2 p. 195-204
3. "Ensemble Monte Carlo study of electron transport in wurtzite InN", Bellotti, E.; Doshi, B.K.; Brennan, K.F.; Albrecht, J.D.; Ruden, P.P., Journal of Applied Physics, vol.85, no.2 p. 916-23, January 15, 1999.
4. "Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy", S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano and I. Akasaki, Journal of Applied Physics, 85, 11, p. 7682, 1 June 1999.