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Volumn 9, Issue 10, 1999, Pages 410-412

High-frequency SiGe-n-MODFET for microwave applications

Author keywords

2DEG; n MODFET; Si SiGe

Indexed keywords


EID: 0000788323     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.798032     Document Type: Article
Times cited : (25)

References (9)
  • 1
    • 8344233318 scopus 로고    scopus 로고
    • SiGe RF-electronic: Devices, circuits, competitors, markets
    • U. König, "SiGe RF-electronic: Devices, circuits, competitors, markets," in Material Research Society, Symp. Proc., vol. 553, 1998.
    • (1998) Material Research Society, Symp. Proc. , vol.553
    • König, U.1
  • 3
    • 0032667315 scopus 로고    scopus 로고
    • Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors
    • to be published
    • T. Hackbarth, G. Höck, H.-J. Herzog, and M. Zeuner, "Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors," J. Crystal Growth, 1999, to be published.
    • (1999) J. Crystal Growth
    • Hackbarth, T.1    Höck, G.2    Herzog, H.-J.3    Zeuner, M.4
  • 5
    • 0032164902 scopus 로고    scopus 로고
    • High performance 0.25 μm p-type Ge/SiGe MODFET's
    • G. Höck, T. Hackbarth, U. Erben, E. Kohn, and U. König, "High performance 0.25 μm p-type Ge/SiGe MODFETs," Electron. Lett., vol. 34, no. 19, p. 1888, 1998.
    • (1998) Electron. Lett. , vol.34 , Issue.19 , pp. 1888
    • Höck, G.1    Hackbarth, T.2    Erben, U.3    Kohn, E.4    König, U.5
  • 8
    • 0026866042 scopus 로고
    • Power gain in feedback amplifiers, a classic revisited
    • May
    • M. S. Gupta, "Power gain in feedback amplifiers, a classic revisited," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 864-879, May 1992.
    • (1992) IEEE Trans. Microwave Theory Tech. , vol.40 , pp. 864-879
    • Gupta, M.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.