SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 27-32

Strain relaxation mechanisms in He+-implanted and annealed Si1-xGex layers on Si(001) substrates

(4) Christiansen, S H a Mooney, P M a Chu, J O a Grill, A a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HELIUM; INTERFACES (MATERIALS); ION IMPLANTATION; NUCLEATION; POSITIVE IONS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; STRAIN; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

STRAIN RELAXATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036349532 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (20)

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