Simulation at the start of the new millenium: Crossing the quantum-classical threshold

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 155-161

  Ferry, D K ^a  

^a Arizona State University   (United States)

Author keywords

Device simulation; Effective potential; Quantum transport

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; QUANTUM THEORY;

QUANTUM TRANSPORT; WAVE PACKETS;

SEMICONDUCTOR DEVICES;

EID: 0035690367     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/59871     Document Type: Conference Paper

References (22)

1. Open problems in quantum simulation in ultra-submicron devices
2. Modeling of quantum transport in semiconductor devices
3. Electrons in semiconductors: How big are they?
4. The onset of quantization in ultra-submicron semiconductor devices
5. Issues in general quantum transport with complex potentials
6. Ultra-small MOSFETs: The importance of the full coulomb interaction on device characteristics
7. The silicon MOSFET from a transmission viewpoint
8. Wigner function methods in modeling of switching in resonant tunneling diodes
9. From delta functions to distributions
10. Quantum mechanics as a statistical theory
11. Collision-duration for optical-phonon emission in semiconductors
12. High field collision rates in polar semiconductors
13. Quantum transport theory
14. Quantum transport physics
15. Simulation of ultra-small GaAs MESFETs using quantum moment equations
16. On the form of the quantum potential for use in hydrodynamic equations for semiconductor device modeling
17. Quantentheorie in hydrodynamischer form
18. A suggested interpretation of the quantum theory in terms of 'Hidden' variables