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Volumn 41, Issue 4 B, 2002, Pages 2578-2582

Room temperature Coulomb diamond characteristic of single electron transistor made by AFM nano-oxidation process

Author keywords

Atomic force microscopy; Coulomb diamond characteristic; Single electron transistor; SWNT

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIAMONDS; ELECTRONS; OXIDATION; PERMITTIVITY; TEMPERATURE DISTRIBUTION; TRANSISTORS;

COULOMB DIAMOND CHARACTERISTIC; SINGLE ELECTRON TRANSISTOR; SWNT;

COULOMB BLOCKADE;

EID: 0037802878 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.41.2578 Document Type: Article

Times cited : (20)

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