Tunnel barrier formation using argon-ion irradiation and single quantum dots in multiwall carbon nanotubes

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2273-2275

  Suzuki, M ^a   Ishibashi, K ^a   Toratani, K ^b   Tsuya, D ^b   Aoyagi, Y ^c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b CHIBA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB DIAMONDS; COULOMB OSCILLATION; SINGLE QUANTUM DOT; TUNNEL BARRIER;

IRRADIATION; SEMICONDUCTOR QUANTUM DOTS;

MULTIWALLED CARBON NANOTUBES (MWCN);

EID: 79956005427     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507608     Document Type: Article

References (9)

1. M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra, A. Zettl, A. Thess, and R. E. Smalley, Science 275, 1922 (1997). sci SCIEAS 0036-8075
2. H. W. C. Postma, T. Teepen, Z. Yao, M. Grifoni, and C. Dekker, Science 293, 76 (2001). sci SCIEAS 0036-8075
3. D. Bozovic, M. Bockrath, J. H. Hafner, C. M. Lieber, H. Park, and M. Tinkham, Appl. Phys. Lett. 78, 3693 (2001). apl APPLAB 0003-6951
4. J. Kong, J. Cao, H. Dai, and E. Anderson, Appl. Phys. Lett. 80, 73 (2002). apl APPLAB 0003-6951
5. N. Yoneya, E. Watanabe, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 79, 1465 (2001). apl APPLAB 0003-6951
6. K. Ishibashi, M. Suzuki, T. Ida, and Y. Aoyagi, Appl. Phys. Lett. 79, 1864 (2001). apl APPLAB 0003-6951
7. This process is exactly the same as the one we carried out for SWNT devices, and the details are found in the following; M. Suzuki, K. Ishibashi, T. Ida, D. Tsuya, K. Toratani, and Y. Aoyagi, J. Vac. Sci. Technol. B 19, 2770 (2001). jvb JVTBD9 0734-211X
8. M. Igami, T. Nakanishi, and T. Ando, J. Phys. Soc. Jpn. 68, 716 (1999). jup JUPSAU 0031-9015
9. A. Kanda, Y. Ootsuka, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 79, 1354 (2001). apl APPLAB 0003-6951