Post-chemical mechanical polishing cleaning of silicon wafers with laser-induced plasma

Journal of Adhesion Science and Technology

Volumn 18, Issue 7, 2004, Pages 779-794

  Devarapalli, Vamsi Krishna ^a   Li, Ying ^b   Cetinkaya, Cetin ^a  

^a Clarkson University   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Ceria; Chemical mechanical polishing (CMP); Laser cleaning; Micro contamination; Nano contamination; Nanoparticles; Particle removal

Indexed keywords

CHEMICAL MECHANICAL POLISHING; LASER PULSES; MICROELECTROMECHANICAL DEVICES; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SLURRIES; CERIUM COMPOUNDS; CHEMICAL CLEANING; LASER PRODUCED PLASMAS; POLISHING; SUBSTRATES;

LASER CLEANING; LASER-INDUCED PLASMA; NANO-CONTAMINATION; PARTICLE REMOVAL;

SILICON WAFERS;

CLEANING PROCESS; CLEANING SURFACES; FEATURE SIZES; GAP DISTANCES; LASER INDUCED PLASMA; MECHANICAL POLISHING; NANO-MANUFACTURING; NON DESTRUCTIVE; NON-CONTACT; NOVEL TECHNIQUES; PARTICLE REMOVAL; POLISHING PADS; POST-CMP CLEANING; PRESSURE FIELD; SUBSTRATE DAMAGE;

EID: 3142687547     PISSN: 01694243     EISSN: None     Source Type: Journal    
DOI: 10.1163/156856104840273     Document Type: Article

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