Study of electronic properties and depth profiles of buried and near-surface silicon nitride layers produced by ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 124, Issue 4, 1997, Pages 506-514

  Markwitz, A ^a,b,d   Arps, M ^c   Baumann, H ^a   Demortier, G ^b   Krimmel, E F ^a   Bethge, K ^a  

^a GOETHE UNIVERSITY   (Germany)

^b UNIVERSITY OF NAMUR   (Belgium)

^c FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Annealing; Depth profiles; Electronic properties; Frenkel Poole emission; Ion implantation; Silicon nitride

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC PROPERTIES; ION IMPLANTATION; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THICKNESS MEASUREMENT;

DEPTH PROFILES; FRENKEL-POOLE EMISSION; NUCLEAR REACTION ANALYSIS;

SILICON NITRIDE;

EID: 0031140333     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00095-5     Document Type: Article

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