Modeling C - V characteristics of deep sub-0.1 micron mesoscale MOS devices

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1883-1890

  Gunther, Norman G ^a   Pesic, Iliya I ^a,b   Mutlu, Ayhan A ^a,c   Rahman, Mahmud ^a  

^a Santa Clara University   (United States)

^b Silvaco Data Systems Inc   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Capacitance voltage characteristics; Charge confinement; Fringe field; Mesoscale; MOS capacitor; Variational principle

Indexed keywords

CALIBRATION; CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CHARGE; ELECTRIC POTENTIAL; FREE ENERGY; FUNCTIONS; MATHEMATICAL MODELS; MOSFET DEVICES; PERMITTIVITY; QUANTUM THEORY;

CAPACITANCE-VOLTAGE CHARACTERISTICS; CHARGE CONFINEMENTS; DOPING CONCENTRATION; FRINGE FIELDS; MESOSCALE; VARIATIONAL PRINCIPLE;

MOS CAPACITORS;

EID: 3142681837     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.030     Document Type: Conference Paper

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