Modeling C-V characteristics of deep sub - 0.1 micron mesoscale MOS devices

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 140-141

  Pesic, Iliya ^a   Gunther, Norman ^a   Mutlu, Ayhan ^b   Rahman, Mahmud ^a  

^a SANTA CLARA UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE COUPLED DEVICES; METALS; QUANTUM THEORY; SEMICONDUCTOR DEVICES; THRESHOLD VOLTAGE;

C-V CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; CHARGE CONFINEMENT; FRINGE FIELDS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; QUANTUM MECHANICAL EFFECTS; SHORT CHANNELS; THRESHOLD VOLTAGE ROLL-OFF;

MOS DEVICES;

EID: 84945307743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272032     Document Type: Conference Paper

References (7)

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7. N.Gunther, A. A. Mutlu, and M.Rahman, in Proc. 2001 IEEE ISDRS, 2001, pp. 94-.