Direct characterization of grain-boundary electrical activity in doped (Ba0.6Sr0.4)TiO3 by combined imaging of electron-beam-induced current and electron-backscattered diffraction

Journal of the American Ceramic Society

Volumn 87, Issue 6, 2004, Pages 1153-1156

  Hayashi, Katsuro ^a   Yamamoto, Takahisa ^a   Ikuhara, Yuichi ^a   Sakuma, Taketo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ELECTRON DIFFRACTION; GRAIN BOUNDARIES; IMAGING TECHNIQUES; INDUCED CURRENTS; POLYCRYSTALLINE MATERIALS; POSITIVE TEMPERATURE COEFFICIENT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

ELECTRON BACKSCATTERED DIFFRACTION; ORIENTATION IMAGING MICROSCOPY; REMOTE ELECTRON BEAM INDUCED CURRENT; SEMICONDUCTING BARIUM COMPOUNDS;

BARIUM COMPOUNDS;

EID: 3142658001     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2004.01153.x     Document Type: Article

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