Monte Carlo simulation of single-electron nanocrystal memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2041-2045

  Sim, Jae Sung ^a   Kong, Jihye ^a   Lee, Jong Duk ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

Coulomb blockade; Monte Carlo method; Nanocrystal memory; Quantum dot; Single electron memory; Single electron transistor

Indexed keywords

APPROXIMATION THEORY; CHANNEL CAPACITY; COULOMB BLOCKADE; ELECTRIC RESISTANCE; MONTE CARLO METHODS; PHOTOLITHOGRAPHY; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD VOLTAGE; TRANSISTORS; TUNNEL JUNCTIONS;

INTERDOT EFFECT; NANOCRYSTAL MEMORY; SINGLE-ELECTRON MEMORY; SINGLE-ELECTRON TRANSISTOR;

NANOSTRUCTURED MATERIALS;

EID: 3142637090     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2041     Document Type: Conference Paper

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