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Volumn 2001-January, Issue , 2001, Pages 140-145

Evaluation of performance and perspectives of nanocrystal flash memories based on 3d quantum modeling

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; FLASH MEMORY; HIGH ELECTRON MOBILITY TRANSISTORS; LOCAL DENSITY APPROXIMATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOTECHNOLOGY; POISSON EQUATION; SCHRODINGER EQUATION;

EID: 64349119270     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2001.966408     Document Type: Conference Paper
Times cited : (4)

References (12)
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    • 0000108790 scopus 로고    scopus 로고
    • Single charge and confinement effects in nano-crystal memories
    • Tiwari S., Rana R, Chan K., Shi L., Hanafi H. Single charge and confinement effects in nano-crystal memories. Appl. Phys. Lett. 69(9):1232-1234, 1996.
    • (1996) Appl. Phys. Lett. , vol.69 , Issue.9 , pp. 1232-1234
    • Tiwari, S.1    Rana, R.2    Chan, K.3    Shi, L.4    Hanafi, H.5
  • 3
    • 0033350529 scopus 로고    scopus 로고
    • Room temperature single electron effects in a Si nano-crystal memory
    • Kim I., Han S., Han H., Lee J., Shin H., Room temperature single electron effects in a Si nano-crystal memory IEEE Electron Device Lett. 20(12):630-632, 1999.
    • (1999) IEEE Electron Device Lett. , vol.20 , Issue.12 , pp. 630-632
    • Kim, I.1    Han, S.2    Han, H.3    Lee, J.4    Shin, H.5
  • 4
    • 0032652745 scopus 로고    scopus 로고
    • A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide
    • King Y.-C, King T.-J., Hu C.: A long-refresh dynamic/quasi-nonvolatile memory device with 2-nm tunneling oxide, IEEE Electron Device Lett. 20(9):409-411, 1999.
    • (1999) IEEE Electron Device Lett. , vol.20 , Issue.9 , pp. 409-411
    • King, Y.-C.1    King, T.-J.2    Hu, C.3
  • 5
    • 0030241362 scopus 로고    scopus 로고
    • Fast and long retention-time nano-crystal memory
    • Hanafi H. I., Tiwari S., Khan I.: Fast and long retention-time nano-crystal memory. IEEE Trans. Electron Devices 43(9):1553-1558, 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.9 , pp. 1553-1558
    • Hanafi, H.I.1    Tiwari, S.2    Khan, I.3
  • 7
    • 0032256629 scopus 로고    scopus 로고
    • MOS memory using germanium nanocrystals formed by thermal oxidation of Si/sub 1-x/Ge/sub x
    • King Y.-C, King T.-J., Hu C. MOS memory using germanium nanocrystals formed by thermal oxidation of Si/sub 1-x/Ge/sub x/Tech. Digest IEEE Electron Device Meeting p. 115-118, 1998.
    • (1998) Tech. Digest IEEE Electron Device Meeting , pp. 115-118
    • King, Y.-C.1    King, T.-J.2    Hu, C.3
  • 11
    • 26144450583 scopus 로고
    • Self-interaction correction to density-functional approximations for manyelectron systems
    • Perdew J. P., Zunger A. Self-interaction correction to density-functional approximations for manyelectron systems. Phys. Rev. B 23(10):5048-5079, 1981.
    • (1981) Phys. Rev. B , vol.23 , Issue.10 , pp. 5048-5079
    • Perdew, J.P.1    Zunger, A.2
  • 12
    • 0031679704 scopus 로고    scopus 로고
    • Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors
    • Rana F., Tiwari S., Welser J. J. Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors. Superlattices and Microstructures 23(3-4):757-770, 1998.
    • (1998) Superlattices and Microstructures , vol.23 , Issue.3-4 , pp. 757-770
    • Rana, F.1    Tiwari, S.2    Welser, J.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.