Growth of InGaN self-assembled quantum dots and their application to photodiodes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 792-795

  Ji, L W ^a   Su, Y K ^a   Chang, S J ^a   Tsai, S T ^a   Hung, S C ^a   Chuang, R W ^a   Fang, T H ^b   Tsai, T Y ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PHOTODIODES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

DARK CURRENTS; GROWTH INTERRUPTION; METAL-SEMICONDUCTOR-METAL (MSM) DEVICES; SELF-ASSEMBLED QUANTUM DOTS (SAQD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142571483     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1722353     Document Type: Conference Paper

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