Low temperature physical-chemical vapor deposition of Ti-Si-N-O barrier films

Electrochemical and Solid-State Letters

Volumn 9, Issue 3, 2006, Pages

  Ee, Y C ^a,b   Chen, Z ^a   Lu, T M ^c   Dong, Z L ^a   Law, S B ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION; MAGNETRON SPUTTERING; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS TEMPERATURE STRESSING (BTS); BINARY BARRIER MATERIALS; COPPER DIFFUSION;

THIN FILMS;

EID: 31144474598     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2166510     Document Type: Article

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