Fabrication and performance of a flat piezoelectric cantilever obtained using a sol-gel derived PZT thick film deposited on a SOI wafer

Smart Materials and Structures

Volumn 15, Issue 1, 2006, Pages

  Kobayashi, T ^a   Tsaur, J ^a   Ichiki, M ^a   Maeda, R ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; PERMITTIVITY; PIEZOELECTRIC MATERIALS; POLARIZATION; SILICON WAFERS; SOL-GELS;

MULTI-LAYERED STRUCTURES; PIEZOELECTRIC CONSTANT; SOI WAFERS;

CANTILEVER BEAMS;

EID: 31144464848     PISSN: 09641726     EISSN: 1361665X     Source Type: Journal    
DOI: 10.1088/0964-1726/15/1/022     Document Type: Conference Paper

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