Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1076-1083

  Takagi, S ^a   Onoue, S ^a   Iyanagi, K ^a   Nishitani, K ^a   Shinmura, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; MONTE CARLO METHODS; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICES; SURFACE TOPOGRAPHY;

CONTACT FORMATION; CONTACT HOLES; SEQUENTIAL PROCESSES; TOPOGRAPHY SIMULATIONS;

ELECTRIC CONTACTS;

EID: 31144463269     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1924609     Document Type: Article

References (24)

1. T. Tatsumi, M. Matsui, M. Okigawa, and M. Sekine, J. Vac. Sci. Technol. B 18, 1897 (2000).
2. K. Yonekura, H. Matsuno, N. Fujiwara, and H. Miyatake, Proceedings Symposium on Dry Process, Tokyo, 2001, p. 285.
3. S. Iwabuchi, et al., Proceedings VLSI Symposium 1986, p. 55.
4. S. Mehta, Proceedings VLSI Multi-level Interconnection Conference, 1986, p. 419.
5. S. Takagi, K. Iyanagi, S. Onoue, T. Shinmura, and M. Fujino, Jpn. J. Appl. Phys., Part 1 41, 3974 (2002).
6. S. Takagi, et al., Plasma Sources Sci. Technol. 12, S64 (2003).
7. O. Yamazaki, K. Iyanagi, S. Takagi, and K. Nanbu, Jpn. J. Appl. Phys., Part 1 41, 1230 (2002).
8. Y. Akiyama, S. Matsumur, and N. Imaishi, Jpn. J. Appl. Phys., Part 1 34, 6171 (1995).
9. N. Motegi, Y. Kashimoto, K. Nagatani, S. Takahashi, T. Kondo, Y. Mizusawa, and I. Nakayama, J. Vac. Sci. Technol. B 13, 1906 (1995).
10. T. E. Clark, M. Chang, and C. Leung, J. Vac. Sci. Technol. B 9, 1478 (1991).
11. D. Zhang and M. J. Kushner, J. Vac. Sci. Technol. A 19, 524 (2001).
12. B. Kim, Y. Akiyama, N. Imaishi, and H. Park, Jpn. J. Appl. Phys., Part 1 38, 2881 (1999).
13. I. Ulaciaf and J. P. Mcvittlie, J. Appl. Phys. 65, 1484 (1989).
14. T. Tatsumi, T. Matsui, M. Okigawa, and M. Sekine, J. Vac. Sci. Technol. A 17, 1562 (1999).
15. M. Suzuki, T. Tanaka, and K. Kawabata, J. Vac. Sci. Technol. A 16, 3142 (1998).
16. S. Berg, T. Larsson, C. Nender, and H. Blom, J. Appl. Phys. 63, 887 (1988).
17. V. V. Serikov and K. Nanbu, J. Vac. Sci. Technol. A 14, 3108 (1996).
18. R. Arora and R. Pollard, J. Electrochem. Soc. 138, 1523 (1991).
19. K. J. Kuijlaars, C. R. Kleijn, and H. E. A. van den Akker, Thin Solid Films 270, 455 (1995).
20. H. Itoh, N. Kaji, T. Watanabe, and H. Okano, Jpn. J. Appl. Phys., Part 1 30, 1525 (1991).
21. K. Kim, J. H. Sone, S. O. Kim, J. S. Park, and H. J. Kim, J. Vac. Sci. Technol. A 14, 19 (1996).
22. D. E. Gray, American Institute of Physics Handbook (McGraw-Hill, New York, 1989).
23. K. Miyata, M. Hori, and T. Goto, Jpn. J. Appl. Phys., Part 1 36, 5340 (1997).
24. T. Shibano, N. Fujiwara, M. Hirayama, H. Nagata, and K. Demizu, Appl. Phys. Lett. 63, 2336 (1993).