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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1230-1234

Modeling of Cu transport in sputtering using a Monte Carlo simulation

(4) Yamazaki, Osamu a,b Iyanagi, Katsumi a,b Takagi, Shigeyuki a,b Nanbu, Kenichi a,b

a TOHOKU UNIVERSITY (Japan)

b TOSHIBA CORPORATION (Japan)

Author keywords

Cu; Emission; Film growth rate; Monte Carlo simulation; Plasma; Sputtering; Sticking coefficient; Test particle Monte Carlo method

Indexed keywords

DEPOSITION; FILM GROWTH; IONS; MONTE CARLO METHODS; PLASMAS; SPUTTERING;

STICKING COEFFICIENTS;

COPPER;

EID: 0036508589 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.1230 Document Type: Article

Times cited : (22)

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