Modeling of tungsten thermal chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 A, 1999, Pages 2881-2887

  Kim, Byunghoon ^a   Akiyama, Yasunobu ^a   Imaishi, Nobuyuki ^a   Park, Heung Chul ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b Chonnam National University   (South Korea)

Author keywords

CVD; Sticking coefficient; Surface reaction; Tungsten

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FILM GROWTH; GAS ADSORPTION; MATHEMATICAL MODELS; METALLIZING; MONTE CARLO METHODS; SILICON WAFERS; SOLIDIFICATION; TUNGSTEN; TUNGSTEN COMPOUNDS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); TUNGSTEN HEXAFLUORIDE;

METALLIC FILMS;

EID: 0032689135     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2881     Document Type: Article

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