Predictable topography simulation of SiO2 etching by C5F8 gas combined with a plasma simulation, sheath model and chemical reaction model

Plasma Sources Science and Technology

Volumn 12, Issue 4, 2003, Pages

  Takagi, S ^a   Onoue, S ^a   Iyanagi, K ^a   Nishitani, K ^a   Shinmura, T ^a   Kanoh, M ^a   Itoh, H ^a   Shioyama, Y ^a   Akiyama, T ^a   Kishigami, D ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC DENSITY OF STATES; FLUOROCARBONS; FREE RADICALS; MATHEMATICAL MODELS; PLASMAS; REACTION KINETICS; REACTIVE ION ETCHING; SURFACE PROPERTIES;

CAPACITIVELY COUPLED PLASMA; CHEMICAL REACTION MODEL; SHEATH MODEL;

SILICA;

EID: 0345015535     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/12/4/021     Document Type: Article

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