Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 115-122

  Ware, Morgan E ^a   Nemanich, Robert J ^a   Gray, Jennifer L ^b   Hull, Robert ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BURGER VECTORS; CROSS-HATCH PATTERN; RAMAN PEAK SHIFTS; SILICON GERMANIUM;

DISLOCATIONS (CRYSTALS);

EID: 0942290082     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1630362     Document Type: Article

References (25)

1. Properties of Crystalline Silicon, edited by Robert Hull (INSPEC, London, 1999).
2. M. Orange, Sci. Am. 285(3), 26 (2001).
3. A. A. Baski, S C. Erwin, and L. J. Whitman, Surf. Sci. 392, 69 (1997).
4. H. J. W. Zandvliet, H. B. Elswijk, E. J. Van Loenen, and D. Dijkkamp, Phys. Rev. B 45, 5965 (1992).
5. S. Van Dijken, H. J. W. Zandvliet, and B. Poelsma, Surf. Rev. Lett. 5, 15 (1998).
6. L. Lapena, I. Berbezier, B. Gallas, and B. Joyce, Thin Solid Films 336, 124 (1998).
7. I. Berbezier, B. Gallas, L. Lapena, J. Fernandez, J. Derrien, and B. Joyce, J. Vac. Sci. Technol. B 16, 1582 (1998).
8. Mogan E. Ware, Ph.D. thesis North Carolina State University, 2002.
9. W. Ranke, Phys. Rev. B 41, 5243 (1990).
10. D. J. Bottomley, H. Omi, and T. Ogino, J. Cryst. Growth 225, 16 (2001).
11. H. Omi and T. Ogino, Phys. Rev. B 59, 7521 (1999).
12. K. Brunner, J. Zhu, C. Miesner, G. Abstreiter, O. Kienzle, and F. Ernst, Physica E (Amsterdam) 7, 881 (2000).
13. J. H. Van Der Merwe, Crit. Rev. Solid State 17, 187 (1991).
14. R. Hull and J. C. Bean, Crit. Rev. Solid State 17, 507 (1992).
15. J. W. Matthews, in Epitaxial Growth Part B, edited by J. W. Matthews (Academic, New York, 1975), p. 559.
16. R. Hull, in Germanium Silicon: Physics and Materials, Semiconductors and Semimetals, edited by R. Hull and J. C. Bean (Academic Press, New York, 1999), Vol. 56, p. 102.
17. F. K. LeGoues, Mater. Res. Bull. 21, 38 (1996).
18. R. Hull, E. A. Stach, R. Tromp, F. Ross, and M. Reuter, Phys. Status Solidi A 171, 133 (1999).
19. E. A. Stach, R. Hull, R. M. Tromp, F. M. Ross, M. C. Reuter, and J. C. Bean, Philos. Mag. A 80, 2159 (2000).
20. P. Kightley, P. J. Goodhew, R. R. Bradley, and P. D. Augustus, J. Cryst. Growth 112, 359 (1991).
21. R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
22. B. W. Dodson and J. Y. Tsao, Appl. Phys. Lett. 51, 1325 (1987).
23. S. B. Samavedam and E. A. Fitzgerald, J. Appl. Phys. 81, 3108 (1997).
24. J. Price Hirth and J. Lothe, Theory of Disclocations, 2nd ed. (Kreiger, Malabar, Florida, 1982).
25. J. A. Floro, E. Chason, L. B. Freund, R. D. Twesten, R. Q. Hwang, and G. A. Lucadamo, Phys. Rev. B 59, 1990 (1999).