Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1611-1614

  Hsu, David S Y ^a   Kim, Chul Soo ^a   Eddy, Charles R ^a   Holm Jr , Ronald T ^a   Henry, Richard L ^a   Casey, J A ^b   Shamamian, V A ^a,c   Rosenberg, A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

^c DOW CHEMICAL COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DENSITY PATTERNING; ION BEAM MILLING; NICKEL MASK; PATTERN TRANSFER;

ANISOTROPY; CHLORINE; ELECTRON BEAM LITHOGRAPHY; ION BEAMS; MILLING (MACHINING); PLASMA ETCHING; SAPPHIRE;

GALLIUM NITRIDE;

EID: 31144459942     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1978896     Document Type: Article

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