First observations of 2D photonic crystal band structure in GaN-sapphire epitaxial material

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 135-138

  Coquillat, D ^a   Ribayrol, A ^b   De La Rue, R M ^b   Le Vassor D'Yerville, M ^a   Cassagne, D ^a   Jouanin, C ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON BEAM LITHOGRAPHY; GALLIUM NITRIDE; REACTIVE ION ETCHING; SAPPHIRE;

AIR HOLES; PHOTONIC CRYSTAL;

BAND STRUCTURE;

EID: 0035120052     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<135::AID-PSSA135>3.0.CO;2-4     Document Type: Article

References (6)

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