High-rate electron cyclotron resonance etching of GaAs via holes

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 282-285

  Chen, Y W ^a   Ooi, B S ^a   Ng, G I ^a   Tan, C L ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON CYCLOTRON RESONANCE; MASKS; MICROWAVES; NICKEL; PLASMA ETCHING; PRESSURE EFFECTS; THERMAL EFFECTS;

VIA HOLES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033730586     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00576-0     Document Type: Article

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