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Volumn 227-228, Issue , 2001, Pages 1-7

Quantum devices, MBE technology for the 21st century

Author keywords

B1. Nitrides; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices; B3. Laser diodes

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; LASER TUNING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

EID: 0035398135     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00623-6     Document Type: Conference Paper
Times cited : (16)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.