Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 361-366

  Shamiryan, D ^a,c   Weidner, K ^a   Gray, W D ^b   Baklanov, M R ^a   Vanhaelemeersch, S ^a   Maex, K ^a,c  

^a IMEC   (Belgium)

^b DOW CORNING CORPORATION   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Low k dielectric; Porosity; Silicon oxycarbide

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; OXYGEN; PERMITTIVITY; POROSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS;

ELLIPSOMETRIC POROSIMETRY;

DIELECTRIC FILMS;

EID: 0036776506     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00809-2     Document Type: Conference Paper

References (6)