Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs pseudomorphic high electron mobility transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6761-6763

  Huang, Chung Er ^a   Lee, Chien Ping ^b   Huang, Ron Ting ^c   Chang, Mau Chung Frank ^b,c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Global Union Technology Corporation   (Taiwan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

AlGaAs; Carrier confinement; Gate length; InGaP; Microwave; PHEMT

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; GATES (TRANSISTOR); HETEROJUNCTIONS; ION IMPLANTATION; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM ARSENIDE; CARRIER CONFINEMENT; DUMMY GATE TECHNOLOGY; GATE LENGTH; INDIUM GALLIUM PHOSPHIDE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY GATE; SHORT CHANNEL EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035712347     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6761     Document Type: Article

References (11)