Quantum chemical study on the gas-phase reaction of tertiarybutylhydrazine: A potential nitrogen-bearing compound for GaN film growth

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 100-107

  Hsu, Yu Jen ^a   Hong, Lu Sheng ^b   Jiang, Jyh Chiang ^b  

^a NANYA INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Density functional theory; Gallium nitride; MOVPE; Tertiarybutylhydrazine

Indexed keywords

ACTIVATION ENERGY; FILM GROWTH; PROBABILITY DENSITY FUNCTION; PYROLYSIS; RATE CONSTANTS; REACTION KINETICS; THERMOANALYSIS;

GAS-PHASE REACTIONS; TERTIARYBUTYLHYDRAZINE; THERMOCHEMICAL PREDICTION; TRANSITION-STATE THEORY;

GALLIUM NITRIDE;

EID: 30944467520     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.080     Document Type: Conference Paper

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