40 Gbit/s digital IC fabricated using InP/GaAsSb/InP DHBT technology

Electronics Letters

Volumn 41, Issue 16, 2005, Pages 905-906

  Konczykowska, A ^a   Riet, M ^a   Berdaguer, P ^a   Bove, P ^b   Kahn, M ^a   Godin, J ^a  

^a ALCATEL THALES III V LAB   (France)

^b Picogiga International   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM COMPOUNDS; TECHNOLOGY TRANSFER;

HIGH YIELD;

DIGITAL INTEGRATED CIRCUITS;

EID: 23944508091     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051546     Document Type: Article

References (7)

1. Bhat, R., et al.: 'InP/GaAsSb and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition', Appl. Phys. Lett., 1996, 68, (7), pp. 985-987
2. CEO>6 V', IEEE Electron Device Lett., 2001, 22, (8), pp. 361-363
3. Chu-Kung, B.F., et al.: 'InP/GaAsSb type-II DHBTs with f(T)> 350 GHz', Electron. Lett., 2004, 40, (20), pp. 1305-1307
4. Bove, P., et al.: 'InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine'. 14th Indium Phosphide and Related Materials Conf. (IPRM), May 2002, pp. 607-610
5. Godin, J., et al.: 'InP DHBT technology and design for 40 Gbit/s fullrate-clock communication circuits'. 24th Gallium Arsenide Integrated Circuit Symp., 2002, pp. 215-218
6. Caffin, D., et al.: 'Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors', IEEE Trans. Electron Devices, 1997, 44, (6), pp. 930-936
7. Konczykowska, A., et al.: 'High-sensitivity InP/InGaAs DHBT decision circuit - design and application in optical and system experiments at 40-43 Gbit/s', IEEE Trans. Microw. Theory Tech., 2005, 53, (4), pp. 1228-1234