A quantitative analysis of stress-induced leakage currents in ultra-thin silicon dioxide films

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Volumn 2, Issue , 2001, Pages 958-963

  Endoh, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84964413902     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.982054     Document Type: Conference Paper

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