Characterization of electron- or proton-irradiated Si space solar cells by THz spectroscopy

Semiconductor Science and Technology

Volumn 21, Issue 2, 2006, Pages 201-209

  Nagai, Naoto ^a,d   Sumitomo, Masakiyo ^a   Imaizumi, Mitsuru ^b   Fukasawa, Ryoichi ^c  

^a TORAY RESEARCH CENTER INC   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c NIKON CORPORATION   (Japan)

^d INDUSTRIAL RESEARCH INSTITUTE OF NIIGATA PREFECTURE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRONS; IRRADIATION; SILICON WAFERS; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS;

LOW FLUENCE SAMPLES; SI SINGLE CRYSTALS; THZ SPECTROSCOPY; THZ-IR FREQUENCY REGION;

SILICON SOLAR CELLS;

EID: 30744443004     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/2/019     Document Type: Article

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