Deep level analysis of radiation-induced defects in Si crystals and solar cells

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 217-223

  Yamaguchi, Masafumi ^a   Khan, Aurangzeb ^a   Taylor, Stephen J ^a   Ando, Koshi ^b   Yamaguchi, Tsutomu ^b   Matsuda, Sumio ^c   Aburaya, Takashi ^c  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001185439     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370698     Document Type: Article

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