FT-IR study of electron- or proton-irradiated Si crystals for solar cells

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 74-79

  Nagai, N ^a   Ishida, H ^a   Hisamatsu, T ^b   Aburaya, T ^c   Matsuda, S ^c  

^a TORAY RESEARCH CENTER INC   (Japan)

^b SHARP CORPORATION   (Japan)

^c JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; BORON; ELECTRON IRRADIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR DOPING; SILICON SOLAR CELLS;

ACCEPTORS;

SILICON WAFERS;

EID: 0033908838     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00650-8     Document Type: Article

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