Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts

Journal of Zhejiang University: Science

Volumn 6 B, Issue 11, 2005, Pages 1135-1140

  Zhao, Yue ^a   Li, Dong Sheng ^a   Xing, Shou Xiang ^b   Yang, De Ren ^a   Jiang, Min Hua ^a,c  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c SHANDONG UNIVERSITY   (China)

Author keywords

Electrical properties; Morphology; Porous silicon

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC PROPERTIES; GOLD; INTERFACES (MATERIALS); MORPHOLOGY; POLARIZATION; SURFACE PROPERTIES;

AU-POROUS SILICON CONTACTS; CONTROL MECHANISMS; POLARIZED BIAS; POROUS SILICON (PS); PS MATRIX MORPHOLOGY; SURFACE MORPHOLOGY;

POROUS SILICON;

GOLD; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; ELECTROCHEMISTRY; ELECTRODE; ELECTROMAGNETIC FIELD; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; POROSITY; SURFACE PROPERTY;

ELECTROCHEMISTRY; ELECTRODES; ELECTROMAGNETIC FIELDS; GOLD; MATERIALS TESTING; MOLECULAR CONFORMATION; POROSITY; SILICON; SURFACE PROPERTIES;

EID: 30544450352     PISSN: 10093095     EISSN: None     Source Type: Journal    
DOI: 10.1631/jzus.2005.B1135     Document Type: Article

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