A model of radiative recombination in n-type porous silicon-aluminum Schottky junction

Applied Physics Letters

Volumn 74, Issue 14, 1999, Pages 1960-1962

  Balucani, M ^a   Bondarenko, V ^a   Franchina, L ^a   Lamedica, G ^a   Yakovtseva, V A ^a   Ferrari, A ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS;

RADIATIVE RECOMBINATION;

SCHOTTKY BARRIER DIODES;

EID: 0032608171     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123741     Document Type: Article

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