Photosensitive structures based on porous silicon

Semiconductors

Volumn 33, Issue 3, 1999, Pages 327-331

  Kaganovich, E B ^a   Manoilov E G ^a   Svechnikov, S V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033089849     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187689     Document Type: Article

References (43)

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